Novel SiGe Island Coarsening Kinetics: Ostwald Ripening and Elastic Interactions

Journal Article · Sun Jan 23 23:00:00 EST 2000 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.84.701· OSTI ID:20215345

Floro, J A; Sinclair, M B; Chason, E; Freund, L B; Twesten, R D; Hwang, R Q; Lucadamo, G A

Real-time light scattering measurements of coherent island coarsening during SiGe/Si heteroepitaxy reveal unusual kinetics. In particular, the mean island volume increases superlinearly with time, while the areal density of islands decreases at a faster-than-linear rate. Neither observation is consistent with standard considerations of Ostwald ripening. Modification of the standard theory to incorporate the effect of elastic interactions in the growing island array reproduces the observed behavior. (c) 2000 The American Physical Society.

• OSTI ID: 20215345
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 4 Vol. 84; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELASTICITY
EXPERIMENTAL DATA
GERMANIUM SILICIDES
KINETICS
LIGHT SCATTERING
MOLECULAR BEAM EPITAXY
SOLID CLUSTERS
THIN FILMS