Kondo physics in the single-electron transistor with ac driving

Journal Article · Sat Jan 15 04:00:00 EST 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.61.2146· OSTI ID:20215223

Nordlander, Peter ^[1]; Wingreen, Ned S ^[2]; Meir, Yigal ^[3]; Langreth, David C ^[4]

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1. Department of Physics and Rice Quantum Institute, Rice University, Houston, Texas 77251-1892 (United States)
2. NEC Research Institute, 4 Independence Way, Princeton, New Jersey 08540 (United States)
3. Physics Department, Ben Gurion University, Beer Sheva, 84105, (Israel)
4. Center for Materials Theory, Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019 (United States)

Using a time-dependent Anderson Hamiltonian, a quantum dot with an ac voltage applied to a nearby gate is investigated. A rich dependence of the linear response conductance on the external frequency and driving amplitude is demonstrated. At low frequencies a sufficiently strong ac potential produces sidebands of the Kondo peak in the spectral density of the dot, and a slow, roughly logarithmic decrease in conductance over several decades of frequency. At intermediate frequencies, the conductance of the dot displays an oscillatory behavior due to the appearance of Kondo resonances of the satellites of the dot level. At high frequencies, the conductance of the dot can vary rapidly due to the interplay between photon-assisted tunneling and the Kondo resonance. (c) 2000 The American Physical Society.

• OSTI ID: 20215223
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 3 Vol. 61; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
FREQUENCY DEPENDENCE
HAMILTONIANS
KONDO EFFECT
SEMICONDUCTOR JUNCTIONS
THEORETICAL DATA
TRANSISTORS
TUNNEL EFFECT