Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

Journal Article · Mon Jan 24 04:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125789· OSTI ID:20215169

Xin, Y ^[1]; James, E M ^[1]; Arslan, I ^[1]; Sivananthan, S ^[1]; Browning, N D ^[1]; Pennycook, S J ^[2]; Omnes, F ^[3]; Beaumont, B ^[3]; Faurie, J-P ^[3]; Gibart, P ^[3]

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1. Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6031 (United States)
3. CRHEA-CRNS, rue Bernard Gregory, 06560 Valbonne, (France)

The electronic structure of pure edge threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films has been studied directly by atomic resolution Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. Dislocation cores in n-type samples grown in N-rich conditions show no evidence for the high concentration of Ga vacancies predicted by previous theoretical calculations. Nitrogen K-edge spectra collected from edge dislocation cores show a sudden and significant increase in the intensity of the first fine-structure peak immediately above the edge onset compared to the bulk spectra. The origin of this increase is discussed. (c) 2000 American Institute of Physics.

• OSTI ID: 20215169
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
DISLOCATIONS
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
GALLIUM NITRIDES
SCANNING ELECTRON MICROSCOPY
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY