X-ray microdiffraction study of Cu interconnects

Journal Article · Mon Jan 17 00:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125731· OSTI ID:20215035

Zhang, X ^[1]; Solak, H ^[1]; Cerrina, F ^[1]; Lai, B ^[2]; Cai, Z ^[2]; Ilinski, P ^[2]; Legnini, D ^[2]; Rodrigues, W ^[2]

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1. Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
2. Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

We have used x-ray microdiffraction to study the local structure and strain variation of copper interconnects. Different types of local microstructures have been found in different samples. Our data show that the Ti adhesion layer has a very dramatic effect on Cu microstructure. Strain measurement was conducted before and after electromigration test, Cu fluorescence was used to find the mass variations around voids and hillocks, and x-ray microdiffraction was used to measure the strain change around that interested region. (c) 2000 American Institute of Physics.

• OSTI ID: 20215035
• Journal Information: Applied Physics Letters, Vol. 76, Issue 3; Other Information: PBD: 17 Jan 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER
CONNECTORS
X-RAY DIFFRACTION
STRAINS
MICROSTRUCTURE
ADHESION
INTEGRATED CIRCUITS
EXPERIMENTAL DATA