Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer
Conference
·
OSTI ID:20107963
Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiN{sub x} capping layer and a subsequent anneal at 600 C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate non-self-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities up to 1.2 cm{sup 2}/Vs and 15 cm{sup 2}/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios > 10{sup 5} in either case.
- Research Organization:
- Princeton Univ., NJ (US)
- Sponsoring Organization:
- Defense Advanced Research Project Agency; US Department of Energy
- DOE Contract Number:
- AC02-76CH03073
- OSTI ID:
- 20107963
- Country of Publication:
- United States
- Language:
- English
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