Comparative study of emission from highly excited (In,Al) GaN thin films and heterostructures

Conference · Thu Jul 01 04:00:00 EDT 1999

OSTI ID:20104734

Little, B D; Bidnyk, S; Schmidt, T J ^[1]

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1. and others

The optical properties of (In, Al) GaN thin films and heterostructures have been compared under the conditions of strong nanosecond excitation. The stimulated emission (SE) threshold from AlGaN epilayers was found to increase with increasing Al content compared to GaN, in contrast to InGaN epilayers, where an order of magnitude decrease is observed. Optically pumped SE has been observed from AlGaN films with aluminum concentrations as high as 26%. Room temperature SE at wavelengths as low as 327 nm has been achieved. In contrast to the increase of SE threshold seen for AlGaN films, the authors found that AlGaN/GaN heterostructures which utilize carrier confinement and optical waveguiding drastically enhance the lasing characteristics. They demonstrate that AlGaN/GaN heterostructures are suitable for the development of deep ultraviolet laser diodes.

• Research Organization: Oklahoma State Univ., Stillwater, OK (US)
• Sponsoring Organization: Defense Advanced Research Project Agency; Office of Naval Research
• OSTI ID: 20104734
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM NITRIDES
EXPERIMENTAL DATA
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM NITRIDES
LASER MATERIALS
OPTICAL PROPERTIES
SEMICONDUCTOR LASERS