Comparison study of structural and optical properties of In{sub x}Ga{sub 1-x}N/GaN quantum wells with different In compositions
Conference
·
OSTI ID:20104646
The effect of In on the structural and optical properties of In{sub x}Ga{sub 1{minus}x}N/GaN multiple quantum wells (MQWs) was investigated. These were five-period MQW's grown on sapphire by metalorganic chemical vapor deposition. Increasing the In composition caused broadening of the high-resolution x-ray diffraction superlattice satellite peak and the photoluminescence-excitation bandedge. This indicates that the higher In content degrades the interface quality because of nonuniform In incorporation into the GaN layer. However, the samples with higher In compositions have lower room temperature (RT) stimulated (SE) threshold densities and lower nonradiative recombination rates. The lower RT SE threshold densities of the higher In samples show that the suppression of nonradiative recombination by In overcomes the drawback of greater interface imperfection.
- Research Organization:
- Oklahoma State Univ., Stillwater, OK (US)
- OSTI ID:
- 20104646
- Country of Publication:
- United States
- Language:
- English
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