Metal/GaN contacts studied by electron spectroscopies

Conference · Sat Jul 01 04:00:00 EDT 2000

OSTI ID:20104638

Dumont, J; Caudano, R; Sporken, R; Monroy, E; Munoz, E; Beaumont, B; Gibart, P

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoichiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15 eV for Au/GaN and 0.85 eV for Cu/GaN were measured using XPS.

• Research Organization: Facultes Univ. Notre-Dame de la Paix, Namur (BE)
• OSTI ID: 20104638
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
COMPOSITE MATERIALS
COPPER
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
GALLIUM NITRIDES
GOLD
INTERFACES
PHOTOELECTRON SPECTROSCOPY
THIN FILMS