Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications[Light Emitting Diodes]
Conference
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OSTI ID:20104633
- and others
Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN exhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, the authors observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {l_brace}1--102{r_brace} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.
- Research Organization:
- Chonbuk National Univ., Chonju (KR)
- OSTI ID:
- 20104633
- Country of Publication:
- United States
- Language:
- English
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