Electrical transport of an AlGaN/GaN two-dimensional electron gas
- and others
An Al{sub x}Ga{sub 1{minus}x}N/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1x10{sup 12} cm{sup {minus}2} and a mobility of 1.9 x 10{sup 4} cm{sup 2}/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.21 {+-} 0.006 m{sub 0} based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 x 10{sup {minus}12} s.
- Research Organization:
- Air Force Research Lab., Wright-Patterson AFB, OH (US)
- OSTI ID:
- 20104597
- Resource Relation:
- Conference: 1999 Materials Research Society Fall Meeting, Boston, MA (US), 11/28/1999--12/03/1999; Other Information: PBD: 2000; Related Information: In: GaN and related alloys -- 1999. Materials Research Society symposium proceedings, Volume 595, by Myers, T.H.; Feenstra, R.M.; Shur, M.S.; Amano, Hiroshi [eds.], [1050] pages.
- Country of Publication:
- United States
- Language:
- English
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