Simulation of H behavior in p-GaN(Mg) at elevated temperatures
Conference
·
OSTI ID:20104584
The behavior of H in p-GaN(Mg) at temperatures >400 C is modeled by using energies and vibration frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquantitatively with experiment for the solubility, uptake, and release of the H when account is taken of a surface barrier.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US)
- OSTI ID:
- 20104584
- Country of Publication:
- United States
- Language:
- English
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