Homo-epitaxial growth on misoriented GaN substrates by MOCVD[Metal Organic Chemical Vapor Deposition]
Conference
·
OSTI ID:20104576
The N-side of GaN single crystals with off-angle orientations of 0{degree}, 2{degree}, and 4{degree} towards the [10{bar 1}0] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as compared with homo-epitaxial films grown on the exact (000{bar 1}) surface. The features still found on the 4{degree} misoriented sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.
- Research Organization:
- Univ. of Nijmegen (NL)
- OSTI ID:
- 20104576
- Country of Publication:
- United States
- Language:
- English
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Journal Article
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Sun May 01 00:00:00 EDT 2016
· Japanese Journal of Applied Physics
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OSTI ID:1254106