Photogeneration and carrier transport in amorphous silicon/crystalline silicon devices

Conference · Tue Jul 01 04:00:00 EDT 1997

OSTI ID:20085567

Jagannathan, B; Anderson, W A

Hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) type heterodiodes in solar cell structures have been studied by rf glow discharge, dc magnetron sputtering, and a remote plasma deposition of a-Si:H onto p type c-Si. Carrier transport and photogeneration in such structures have been investigated by current-voltage-temperature, thermally stimulated capacitance (TSCAP), and spectral response experiments. Dark carrier conduction is found to be a combination of tunneling and interface recombination, but is dominated by either one depending on the deposition/sputtering conditions. The conditions investigated include energy of the plasma species, type of plasma cleaning, and substrate preparation techniques. For each of the conditions, the trap type, energy and concentration have been identified by TSCAP. Solar cells fabricated by the optimized fabrication scheme routinely yield 10.5% efficient devices having a short circuit current density (J{sub sc}) of 30 mA/cm{sup 2}, a open circuit voltage of 0.55 volts and a fill factor (FF) of 0.64, without an AR coating, over 0.3 cm{sup 2} area.

• Research Organization: State Univ. of New York at Buffalo, Amherst, NY (US)
• Sponsoring Organization: National Renewable Energy Laboratory; New York State Energy Research and Development Authority
• OSTI ID: 20085567
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
AMORPHOUS STATE
CARRIER MOBILITY
ELECTRICAL PROPERTIES
FABRICATION
HETEROJUNCTIONS
HYDROGEN ADDITIONS
P-TYPE CONDUCTORS
SILICON SOLAR CELLS
TRAPS