Photoconductivity and density of states in microstructural amorphous silicon

Conference · Tue Jul 01 04:00:00 EDT 1997

OSTI ID:20085489

Budaguan, B G; Aivazov, A A; Radosel'sky, A G; Popov, A A

It has been reported in previous works that using of RF 55 kHz PECVD method allows to deposit microstructural inhomogeneous a-Si:H films at high deposition rate (10--20{angstrom}/c) and with high photoconductivity. The structural analysis with using of IR spectroscopy and atomic force microscopy (AFM) performed in this work have shown that these films possess a relatively regular microstructure consisting of grains with characteristic size of {approximately}300--500{angstrom}. The regular microstructure of investigated films differs from inhomogeneous a-Si:H with deteriorate electronic properties. At the same time the diffraction analysis didn't reveal the presence of microcrystals. Therefore, the authors denoted their films as microstructural a-Si:H films. In this work they performed the modeling of the photoconductivity of microstructural a-Si:H films to analyze the density-of-states (DOS) responsible for recombination kinetics. For this purpose different approaches to photoconductivity modeling have been used to simulate the experimentally measured temperature dependence of photoconductivity. The comparative analysis of results of these simulations and ESR measurements have shown that recombination in high photoconductive microstructural films is controlled by deep neutral states.

• Research Organization: Moscow Inst. of Electronic Technology (RU)
• OSTI ID: 20085489
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ENERGY LEVELS
HYDROGEN ADDITIONS
MICROSTRUCTURE
PHOTOCONDUCTIVITY
RECOMBINATION
SILICON