Recent advances in plasma-based ion sources for commercial ion implantation of semiconductors
Commercial Ion Implanters have always used plasma sources to generate the dopant ions which form the implanter ion beam. This variable-energy beam is used to modify the electrical properties of silicon wafer substrates. The authors will describe some of the source technologies which have recently been developed specifically for ion implant. The standard technology in the industry is the Enhanced Bernas hot cathode arc discharge source, but more recently an indirectly-heated cathode version has been developed which yields more attractive production performance and reliability. Both of these design configurations have been further customized by OEM's, for example by implementing dual emitter configurations. The implant application of RF ion sources will also be discussed and a historical context will be established, focusing on the advantages of the relatively cold plasma provided by the RF source technology originally developed for neutral beam injection in fusion research. Certain of these developments have become enabling technologies for new semiconductor processes. The required applications space of CMOS processing, for example, has been expanded to require the production of high perveance ion beams of a few hundred eV, and also low perveance beams of several MeV. The results of these recent design innovations has resulted in customized source designs for specific regions of the required applications space.
- Research Organization:
- Eaton Corp., Beverly, MA (US)
- OSTI ID:
- 20067639
- Resource Relation:
- Conference: 1999 IEEE International Conference on Plasma Science, Monterey, CA (US), 06/20/1999--06/24/1999; Other Information: PBD: 1999; Related Information: In: The 26th IEEE international conference on plasma science, 342 pages.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nissin Ion Equipment Indirectly Heated Cathode Ion
Sources and transport systems for low energy extreme of ion implantation