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Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Journal Article · · Joule

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
DOE Contract Number:
AC36-08GO28308
OSTI ID:
2005601
Report Number(s):
NREL/JA-5900-85718; MainId:86491; UUID:122554f5-067a-44c8-a20f-1707dd080db9; MainAdminID:70762
Journal Information:
Joule, Vol. 7, Issue 9
Country of Publication:
United States
Language:
English

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