Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells
Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE National Renewable Energy Laboratory (NREL), Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 2005601
- Report Number(s):
- NREL/JA-5900-85718; MainId:86491; UUID:122554f5-067a-44c8-a20f-1707dd080db9; MainAdminID:70762
- Journal Information:
- Joule, Journal Name: Joule Journal Issue: 9 Vol. 7
- Country of Publication:
- United States
- Language:
- English
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