Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Zhai, Li; Gebre, Sara T.; Chen, Bo; Xu, Dan; Chen, Junze; Li, Zijian; Liu, Yawei; Yang, Hua; Ling, Chongyi; Ge, Yiyao; Zhai, Wei; Chen, Changsheng; Ma, Lu; Zhang, Qinghua; Li, Xuefei; Yan, Yujie; Huang, Xinyu; Li, Lujiang; Guan, Zhiqiang; Tao, Chen-Lei; Huang, Zhiqi; Wang, Hongyi; Liang, Jinze; Zhu, Ye; Lee, Chun-Sing; Wang, Peng; Zhang, Chunfeng; Gu, Lin; Du, Yonghua; Lian, Tianquan; Zhang, Hua; Wu, Xue-Jun

doi:10.1038/s41467-023-38237-7

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Journal Article · Wed May 03 00:00:00 EDT 2023 · Nature Communications

DOI:https://doi.org/10.1038/s41467-023-38237-7· OSTI ID:2005148

^[1]; Gebre, Sara T. ^[2]; ^[3]; Xu, Dan ^[4]; Chen, Junze ^[5]; ^[3]; Liu, Yawei ^[2]; Yang, Hua ^[3]; ^[3]; Ge, Yiyao ^[3]; Zhai, Wei ^[3]; Chen, Changsheng ^[6]; Ma, Lu ^[7]; Zhang, Qinghua ^[8]; Li, Xuefei ^[4]; Yan, Yujie ^[4]; ^[4]; Li, Lujiang ^[3]; Guan, Zhiqiang ^[3]; Tao, Chen-Lei ^[4] more »

Nanjing University (China); City University of Hong Kong (China)
Emory University, Atlanta, GA (United States)
City University of Hong Kong (China)
Nanjing University (China)
Sichuan University (China)
Hong Kong Polytechnic University, Hung Hom (Hong Kong)
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Chinese Academy of Sciences (CAS), Beijing (China)
Nanjing University (China); University of Warwick, Coventry (United Kingdom)
Tsinghua University, Beijing (China)

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: SC0012704

OSTI ID:: 2005148

Report Number(s):: BNL--224834-2023-JAAM

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 14; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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