Fabrication and Performance of Lateral GaN Vacuum Nanoelectronic Devices.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories,, Livermore, CA
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 2004536
- Report Number(s):
- SAND2022-11966C; 709588
- Country of Publication:
- United States
- Language:
- English
Similar Records
GaN Vacuum Nanoelectronic Devices.
GaN Vacuum Nanoelectronic Devices (invited).
On-chip GaN Vacuum Nanoelectronics.
Conference
·
Sat Aug 01 00:00:00 EDT 2020
·
OSTI ID:1814119
GaN Vacuum Nanoelectronic Devices (invited).
Conference
·
Mon Aug 01 00:00:00 EDT 2022
·
OSTI ID:2004315
On-chip GaN Vacuum Nanoelectronics.
Conference
·
Thu Sep 01 00:00:00 EDT 2022
·
OSTI ID:2004758