Imaging atomically thin transition metal dichalcogenides using deep ultraviolet photoelectron emission microscopy.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories,, Livermore, CA
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 2004199
- Report Number(s):
- SAND2022-10103C; 708612
- Country of Publication:
- United States
- Language:
- English
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Sub-surface imaging of atomically-thin semiconductors beneath dielectrics based on optical standing wave using photoelectron emission microscopy with deep-ultraviolet photoexcitation .
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