Transient Photocurrent from High-Voltage Vertical GaN Diodes Irradiated with Electrons:Experiments and Simulations.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 2003948
- Report Number(s):
- SAND2022-9246C; 708063
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development of High-Voltage Vertical GaN PN Diodes (invited).
Development of High-Voltage Vertical GaN PN Diodes (invited).
Development of High-Voltage Vertical GaN PN Diodes (invited).
Conference
·
Mon Nov 30 23:00:00 EST 2020
·
OSTI ID:1835967
Development of High-Voltage Vertical GaN PN Diodes (invited).
Conference
·
Mon Nov 30 23:00:00 EST 2020
·
OSTI ID:1835968
Development of High-Voltage Vertical GaN PN Diodes (invited).
Conference
·
Sun Nov 01 00:00:00 EDT 2020
·
OSTI ID:1831353