Defect Mediated and Diode Degradation in Wide Band-Gap AlGaN Electronics.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 2003234
- Report Number(s):
- SAND2022-6755C; 706537
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultra-wide band gap AlGaN electronics and opto-electronics.
Ultra-wide band gap AlGaN electronics and opto-electronics.
Ultra-wide band gap AlGaN polarizationdoped.
Conference
·
Wed Aug 01 00:00:00 EDT 2018
·
OSTI ID:1581707
Ultra-wide band gap AlGaN electronics and opto-electronics.
Conference
·
Wed Aug 01 00:00:00 EDT 2018
·
OSTI ID:1581718
Ultra-wide band gap AlGaN polarizationdoped.
Conference
·
Sun Jul 01 00:00:00 EDT 2018
·
OSTI ID:1569681