One-step electrodeposition of Cu{sub 2{minus}x}Se and CuInSe{sub 2} thin films by the induced co-deposition mechanism
The induced co-deposition mechanism in one-step electrodeposition of Cu{sub 2{minus}x}Se and CuInSe{sub 2} thin films was investigated. Cu{sub 2{minus}x}Se and CuInSe{sub 2} thin films were deposited potentiostatically on Mo substrates by a one-step process from an acidic electrolyte containing SCN{sup {minus}} ions as complexing agents. The films were examined by scanning electron microscopy, energy dispersive X-ray spectrometry. X-ray diffraction, and ion beam analysis methods. Good control of stoichiometry was achieved over a wide potential range, thus indicating that the film composition may indeed be controlled by the induced co-deposition mechanism. The effects of the thiocyanate ions on the reduction potentials of Cu{sup +}, In{sup 3+}, and Se{sup 4+} ions were examined by cyclic voltammetry. In order to improve their crystallinity, the CuInSe{sub 2} films were annealed under a N{sub 2} atmosphere after deposition.
- Research Organization:
- Univ. of Helsinki (FI)
- OSTI ID:
- 20030664
- Journal Information:
- Journal of the Electrochemical Society, Vol. 147, Issue 3; Other Information: PBD: Mar 2000; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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