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Charge Inhomogeneity Mediated Low-Frequency Noise in Encapsulated Graphene Field Effect Transistors.

Conference ·
DOI:https://doi.org/10.2172/2001970· OSTI ID:2001970
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
2001970
Report Number(s):
SAND2022-2703C; 703991
Country of Publication:
United States
Language:
English

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