skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Compositional effects on the degradation of PVD-TiSiN[Physical Vapor Deposition]

Conference ·
OSTI ID:20015560

PVD-Ti{sub x}Si{sub y}N{sub z} films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N{sub 2} are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N{sub 2} partial pressure. Electrical results versus thermal history for films of {approximately}6--18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000 C anneal. As-deposited compositions which lie above the TiN-Si{sub 3}N{sub 4} phase line yield crystals of TiN. Compositions below the TiN-Si{sub 3}N{sub 4} phase line yield crystals of Ti{sub 2}N. Bulk resistivity as-deposited (<400{micro}{Omega}-cm) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti{sub 40}Si{sub 15}N{sub 4}5 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700 C.

Research Organization:
Univ. of California San Diego, La Jolla, CA (US)
OSTI ID:
20015560
Resource Relation:
Conference: Polycrystalline thin films - Structure, Texture, Properties and Applications III, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: Single article reprints from this publication are available through University Microfilms Inc., 300 North Zeeb Road, Ann Arbor, MI 48106; PBD: 1997; Related Information: In: Polycrystalline thin films -- Structure, texture, properties and applications III. Materials Research Society symposium proceedings: Volume 472, by Yalisove, S.M.; Adams, B.L.; Im, J.S.; Zhu, Y.; Chen, F.R. [eds.], 489 pages.
Country of Publication:
United States
Language:
English