Functional characteristics and radiation tolerance of AToM, the front-end chip of BaBar silicon vertex tracker

Journal Article · Wed Dec 01 04:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819242· OSTI ID:20015401

Manfredi, P F; Abbott, B; Clark, A ^[1]

---

1. and others

The readout chip designed to process the microstrip signals in the BaBar Silicon Vertex Tracker (SVT), after being realized twice in a radsoft technology has been transferred into the final radhard process. So far the circuit has gone through four different radhard submissions, one aiming at providing a preliminary insight into the characteristics of the radhard chip, the other ones constituting pre-production and production runs. Chips from these submissions have undergone a thorough set of tests addressing functional aspects, noise parameters and effects of radiation on signal and noise behavior. The present paper discusses the results of these tests and describes the final version of the circuit which has been proven to successfully meet the experiment requirements.

• Research Organization: Univ. di Pavia (IT)
• OSTI ID: 20015401
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt2 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DATA ACQUISITION SYSTEMS
DESIGN
INTEGRATED CIRCUITS
PEP STORAGE RINGS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
READOUT SYSTEMS
SI SEMICONDUCTOR DETECTORS