Proton damage effects on p-channel CCDs

Journal Article · Wed Dec 01 04:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819155· OSTI ID:20014742

Hopkinson, G R

An experimental batch of p-buried channel CCDs has been fabricated and characterized for proton-induced radiation damage. Dark current effects were similar to conventional n-channel CCDs, but radiation-induced changes in charge transfer inefficiency were reduced by approximately a factor 3 for {minus}30 C operation and background signal {approximately}2,000 electrons/pixel; though this is a lower limit and further reduction may be possible in future CCD batches.

• Research Organization: Sira Electro-Optics Ltd., South Hill (GB)
• OSTI ID: 20014742
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
CHARGE-COUPLED DEVICES
ELECTRICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PROTONS