Properties of CoSb{sub 3} films grown by pulsed laser deposition
Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.
- Research Organization:
- Oak Ridge National Lab., TN (US)
- Sponsoring Organization:
- US Department of Energy
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 20014261
- Country of Publication:
- United States
- Language:
- English
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