High-efficiency cadmium-free Cu(In,Ga)Se{sub 2} thin-film solar cells with chemically deposited ZnS buffer layers
Cadmium-free Cu(In,Ga)Se{sub 2} (CIGS) thin-film solar cells with a MgF{sub 2}/ZnO:Al/CBD-ZnS/CIGS/Mo/SLG structure have been fabricated using chemical bath deposition (CBD)-ZnS buffer layers and high-quality CIGS absorber layers grown using molecular beam epitaxy (MBE) system. The use of CBD-ZnS, which is a wider band gap material than CBD-CdS, improved the quantum efficiency of fabricated cells at short wavelengths, leading to an increase in the short-circuit current. The best cell at present yielded an active area efficiency of 16.9% which is the highest value reported previously for Cd-free CIGS thin-film solar cells. The as-fabricated solar cells exhibited a reversible light-soaking effect under AM 1.5, 100 mW/cm{sup 2} illumination. This paper also presents a discussion of the issues relating to the use of the CBD-ZnS buffer material for improving device performance.
- Research Organization:
- Aoyama Gakuin Univ., Tokyo (JP)
- OSTI ID:
- 20006084
- Journal Information:
- IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers) Journal Issue: 10 Vol. 46; ISSN 0018-9383; ISSN IETDAI
- Country of Publication:
- United States
- Language:
- English
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