Noise degradation induced by {gamma} rays and P- and N-channel junction field-effect transistors

Journal Article · Fri Oct 01 00:00:00 EDT 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.795806· OSTI ID:20000603

Manfredi, P F; Ratti, L; Re, V; Speziali, V

This paper compares the effects of {gamma} rays on the noise behavior of P- and N-channel JFET's intended as front-end elements in radiation detector preamplifiers. It will be shown that exposure to {gamma} rays affects the noise spectral density in a way which is substantially different for the two types of devices. As a result of the noise analysis it is suggested that in preamplifiers exposed to {gamma} rays the P-channel JFET should be preferred at processing times in 1-to-10 {micro}s range, while the N-channel device remains superior in applications involving processing times below 0.1{micro}s.

• Research Organization: Lawrence Berkeley National Lab., CA (US)
• OSTI ID: 20000603
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Vol. 46, Issue 5; Other Information: PBD: Oct 1999; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
FIELD EFFECT TRANSISTORS
JUNCTION TRANSISTORS
NOISE
PHYSICAL RADIATION EFFECTS
GAMMA RADIATION