Heavy ion sputter measurements on metals in UHV conditions: Evidence of enhanced sputter yields
- Univ. of Muenchen, Garching (Germany); and others
Heavy ion sputter measurements using a {sup 127}I ion beam with ion energies between 120-150 MeV were performed on metals under UHV-conditions necessary due to the low beam currents of typically 10{sup 10} particles/s. For this measurements one of the beam lines was renewed and an UHV-chamber was designed with a base pressure better then 10{sup {minus}10} mbar. To reduce the oxygen and carbon contamination from the target surface each target was cleaned before the heavy ion irradiation with a conventional Ar etching gun for at least 30 min. Targets were irradiated at incident angles of 20{degrees} to the surface. The sputtered particles were collected on Si-wafer material at a distance of 12 mm from the target. After the irradiation of the targets the Si-collectors were dismounted from the UHV-chamber and analyzed with heavy ion RBS (25 MeV {sup 16}O beam). The measured sputter yields are, compared to simulated sputter yields using the computer code TRIM CASCADE (TC), in all cases more than one order of magnitude higher than expected from the classical Sigmund theory used in the program. These results will be compared with earlier sputter measurements performed under different vacuum conditions.
- OSTI ID:
- 199835
- Report Number(s):
- CONF-941129-; TRN: 95:005652-0337
- Resource Relation:
- Conference: 13. international conference on the application of accelerators in research and industry, Denton, TX (United States), 7-10 Nov 1994; Other Information: PBD: 1994; Related Information: Is Part Of Thirteenth international conference on the application of accelerators in research and industry; Duggan, J.L.; Morgan, I.L. [eds.]; PB: 201 p.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Energy dependence of the sputtering yield of silicon bombarded with neon, argon, krypton, and xenon ions
Consequences of sputtering with molecular ions