A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion

Shi, Jiaojian; Yoo, Daehan; Vidal-Codina, Ferran; Baik, Chan-Wook; Cho, Kyung-Sang; Nguyen, Ngoc-Cuong; Utzat, Hendrik; Han, Jinchi; Lindenberg, Aaron M.; Bulović, Vladimir; Bawendi, Moungi G.; Peraire, Jaime; Oh, Sang-Hyun; Nelson, Keith Adam

doi:10.1038/s41565-022-01243-9

A room-temperature polarization-sensitive CMOS terahertz camera based on quantum-dot-enhanced terahertz-to-visible photon upconversion

Journal Article · Thu Nov 03 00:00:00 EDT 2022 · Nature Nanotechnology

DOI:https://doi.org/10.1038/s41565-022-01243-9· OSTI ID:1997223

^[1]; Yoo, Daehan ^[2]; Vidal-Codina, Ferran ^[3]; Baik, Chan-Wook ^[4]; Cho, Kyung-Sang ^[4]; ^[3]; Utzat, Hendrik ^[5]; ^[3]; ^[6]; Bulović, Vladimir ^[3]; ^[3]; ^[3]; ^[2]; ^[3]

Massachusetts Institute of Technology (MIT), Cambridge, MA (United States); SLAC
University of Minnesota, Minneapolis, MN (United States)
Massachusetts Institute of Technology (MIT), Cambridge, MA (United States)
Samsung Advanced Institute of Technology, Suwon (Korea, Republic of)
Massachusetts Institute of Technology (MIT), Cambridge, MA (United States); University of California, Berkeley, CA (United States)
Stanford University, CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Detection of terahertz (THz) radiation has many potential applications, but presently available detectors are limited in many aspects of their performance, including sensitivity, speed, bandwidth and operating temperature. Most do not allow the characterization of THz polarization states. Recent observation of THz-driven luminescence in quantum dots offers a possible detection mechanism via field-driven interdot charge transfer. Here, we demonstrate a room-temperature complementary metal–oxide–semiconductor THz camera and polarimeter based on quantum-dot-enhanced THz-to-visible upconversion mechanism with optimized luminophore geometries and fabrication designs. Besides broadband and fast responses, the nanoslit-based sensor can detect THz pulses with peak fields as low as 10 kV cm–1. A related coaxial nanoaperture-type device shows a to-date-unexplored capability to simultaneously record the THz polarization state and field strength with similar sensitivity.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); US Army Research Laboratory (USARL); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1997223

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 12 Vol. 17; ISSN 1748-3387

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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