Evaluation of electron lifetime for Te inclusions free CdZnTe
- Korea University, Seoul (Korea, Republic of)
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Savannah River National Laboratory (SRNL), Aiken, SC (United States)
Te secondary phase defects are known as major obstacle for improving charge carriers transport properties of CdTe compounds material. The enhanced detector performance was reported for Te inclusions free CZT detector implemented through two-step annealing (i.e., first in Cd and second in Te). Here, we applied the time-of-flight (TOF) technique to measure the electron lifetime in as-grown and two-step annealed CZT material. TOF has several advantages over Hecht equation fitting such as independence of the electric field distribution, direct measurement of carrier lifetime, and high accuracy for high mobility-lifetime product CZT material. The detector performance improved drastically for the two-step annealed CZT detector except which containing inordinate number and size of prismatic punching defects. The average electron lifetime increased more than 10 times after successful two-step annealing.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Nuclear Physics (NP)
- Grant/Contract Number:
- SC0012704
- OSTI ID:
- 1996210
- Report Number(s):
- BNL-224703-2023-JAAM
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 1055; ISSN 0168-9002
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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