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Evaluation of electron lifetime for Te inclusions free CdZnTe

Journal Article · · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
 [1];  [2];  [3]
  1. Korea University, Seoul (Korea, Republic of)
  2. Brookhaven National Laboratory (BNL), Upton, NY (United States)
  3. Savannah River National Laboratory (SRNL), Aiken, SC (United States)

Te secondary phase defects are known as major obstacle for improving charge carriers transport properties of CdTe compounds material. The enhanced detector performance was reported for Te inclusions free CZT detector implemented through two-step annealing (i.e., first in Cd and second in Te). Here, we applied the time-of-flight (TOF) technique to measure the electron lifetime in as-grown and two-step annealed CZT material. TOF has several advantages over Hecht equation fitting such as independence of the electric field distribution, direct measurement of carrier lifetime, and high accuracy for high mobility-lifetime product CZT material. The detector performance improved drastically for the two-step annealed CZT detector except which containing inordinate number and size of prismatic punching defects. The average electron lifetime increased more than 10 times after successful two-step annealing.

Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP)
Grant/Contract Number:
SC0012704
OSTI ID:
1996210
Report Number(s):
BNL-224703-2023-JAAM
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 1055; ISSN 0168-9002
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English

References (13)

Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method journal February 2013
‘Star-like’ defects in Cd-annealed CdZnTe crystals-an experimental study of their origin and formation mechanism journal March 2013
Extended defects in CdZnTe crystals: Effects on device performance journal May 2010
Prismatic punching defects in CdTe compounds journal March 2014
Two-step thermal process in tellurium vapor for tellurium inclusion annealing in high resistivity CdZnTe crystals journal April 2015
Electric field distribution around cadmium and tellurium inclusions within CdTe-based compounds journal March 2020
Detector performance and defect densities in CdZnTe after two-step annealing
  • Kim, Eunhye; Kim, Yonghoon; Bolotnikov, A. E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 923 https://doi.org/10.1016/j.nima.2019.01.064
journal April 2019
Effects of excess tellurium and growth parameters on the band gap defect levels in Cd x Zn 1−x Te journal October 2012
Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors journal September 2016
Effects of Te inclusions on the performance of CdZnTe radiation detectors conference October 2007
Effects of Te Inclusions on the Performance of CdZnTe Radiation Detectors journal October 2008
Inclusions Elimination and Resistivity Restoration of CdTe:Cl Crystals by Two-Step Annealing journal August 2011
Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity journal August 2018

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