Nonlinear Dispersion Relation and Out‐of‐Plane Second Harmonic Generation in MoSSe and WSSe Janus Monolayers

Petrić, Marko M.; Villafañe, Viviana; Herrmann, Paul; Ben Mhenni, Amine; Qin, Ying; Sayyad, Yasir; Shen, Yuxia; Tongay, Sefaattin; Müller, Kai; Soavi, Giancarlo; Finley, Jonathan J.; Barbone, Matteo

doi:10.1002/adom.202300958

Nonlinear Dispersion Relation and Out‐of‐Plane Second Harmonic Generation in MoSSe and WSSe Janus Monolayers (in EN)

Journal Article · Tue Aug 01 00:00:00 EDT 2023 · Advanced Optical Materials

DOI:https://doi.org/10.1002/adom.202300958· OSTI ID:1993522

^[1]; ^[2]; ^[3]; ^[2]; Qin, Ying ^[4]; Sayyad, Yasir ^[4]; Shen, Yuxia ^[4]; ^[4]; ^[1]; ^[3]; Finley, Jonathan J. ^[2]; ^[1]

Technical Univ. of Munich (Germany); Munich Center for Quantum Science and Technology (MCQST) (Germany)
Munich Center for Quantum Science and Technology (MCQST) (Germany); Technical Univ. of Munich (Germany)
Friedrich Schiller Univ., Jena (Germany)
Arizona State Univ., Tempe, AZ (United States)

Janus transition metal dichalcogenides are an emerging class of atomically thin materials with engineered broken mirror symmetry that gives rise to long‐lived dipolar excitons, Rashba splitting, and topologically protected solitons. They hold great promise as a versatile nonlinear optical platform due to their broadband harmonic generation tunability, ease of integration on photonic structures, and nonlinearities beyond the basal crystal plane. Here, second and third harmonic generation in MoSSe and WSSe Janus monolayers is studied. Polarization‐resolved spectroscopy is used to map the full second‐order susceptibility tensor of MoSSe, including its out‐of‐plane components. In addition, the effective third‐order susceptibility and the second‐order nonlinear dispersion close to exciton resonances for both MoSSe and WSSe are measured at room and cryogenic temperatures. This work sets a bedrock for understanding the nonlinear optical properties of Janus transition metal dichalcogenides and probing their use in the next‐generation on‐chip multifaceted photonic devices.

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Research Organization:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: SC0020653

Other Award/Contract Number:: 1904716
1935994
ECCS2052527
DMR1955889
DMR2111812
CMMI 2129412
CMMI 1825594
CMMI 1933214
820423 (S2QUIP)
MCQST (EXC‐2111)
e‐Conversion (EXC‐2089)
SPP 2299
CRC 1375 NOA projects B5
IRTG 2675 META‐ACTIVE (project A4)
IGSSE

OSTI ID:: 1993522

Alternate ID(s):: OSTI ID: 1995573
OSTI ID: 2575788

Journal Information:: Advanced Optical Materials, Journal Name: Advanced Optical Materials Journal Issue: 19 Vol. 11; ISSN 2195-1071

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: EN

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