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Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gating

Journal Article · · Science Advances
 [1];  [2];  [3];  [4];  [3];  [3];  [4];  [3];  [3];  [4];  [2];  [3];  [5];  [3]
  1. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China); Purdue University
  2. Westlake University, Hangzhou (China)
  3. Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China)
  4. ZJU-Hangzhou Global Scientific and Technological Innovation Center (China)
  5. Purdue University, West Lafayette, IN (United States)
Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here, using organic semiconductor–incorporated 2D halide perovskites as the model system, we realize the manipulation of band-edge states and charge distribution via mechanical—rather than chemical or thermal—regulation. Compression induces band-alignment switching and charge redistribution due to the different pressure responses of organic and inorganic building blocks, giving controllable emission properties of 2D perovskites. We propose and demonstrate a “pressure gating” strategy that enables the control of multiple emission states within a single material. We also reveal that band-alignment transition at the organic-inorganic interface is intrinsically not well resolved at room temperature owing to the thermally activated transfer and shuffling of band-edge carriers. This work provides important fundamental insights into the energetics and carrier dynamics of hybrid semiconductor heterostructures.
Research Organization:
Purdue University, West Lafayette, IN (United States)
Sponsoring Organization:
CAEP Research; National Nature Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
SC0022082
OSTI ID:
1993387
Journal Information:
Science Advances, Journal Name: Science Advances Journal Issue: 44 Vol. 8; ISSN 2375-2548
Publisher:
AAASCopyright Statement
Country of Publication:
United States
Language:
English

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