Reconfiguring band-edge states and charge distribution of organic semiconductor–incorporated 2D perovskites via pressure gating
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China); Purdue University
- Westlake University, Hangzhou (China)
- Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai (China)
- ZJU-Hangzhou Global Scientific and Technological Innovation Center (China)
- Purdue University, West Lafayette, IN (United States)
Two-dimensional (2D) semiconductor heterostructures are key building blocks for many electronic and optoelectronic devices. Reconfiguring the band-edge states and modulating their interplay with charge carriers at the interface in a continuous manner have long been sought yet are challenging. Here, using organic semiconductor–incorporated 2D halide perovskites as the model system, we realize the manipulation of band-edge states and charge distribution via mechanical—rather than chemical or thermal—regulation. Compression induces band-alignment switching and charge redistribution due to the different pressure responses of organic and inorganic building blocks, giving controllable emission properties of 2D perovskites. We propose and demonstrate a “pressure gating” strategy that enables the control of multiple emission states within a single material. We also reveal that band-alignment transition at the organic-inorganic interface is intrinsically not well resolved at room temperature owing to the thermally activated transfer and shuffling of band-edge carriers. This work provides important fundamental insights into the energetics and carrier dynamics of hybrid semiconductor heterostructures.
- Research Organization:
- Purdue University, West Lafayette, IN (United States)
- Sponsoring Organization:
- CAEP Research; National Nature Science Foundation of China (NSFC); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
- Grant/Contract Number:
- SC0022082
- OSTI ID:
- 1993387
- Journal Information:
- Science Advances, Journal Name: Science Advances Journal Issue: 44 Vol. 8; ISSN 2375-2548
- Publisher:
- AAASCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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