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Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

Conference ·
DOI:https://doi.org/10.1063/5.0141153· OSTI ID:1992839
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This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1992839
Report Number(s):
NREL/CP-5900-87011; MainId:87786; UUID:80d73094-66da-4436-a305-065295c94d2e; MainAdminID:70046
Resource Relation:
Conference: Presented at SiliconPV 2022: The 12th International Conference on Crystalline Silicon Photovoltaics, 28-30 March 2022, Konstanz, Germany
Country of Publication:
United States
Language:
English

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Related Subjects

CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SOLAR ENERGY
dielectric properties
electroforming
semiconductor device fabrication
semiconductor materials