Effect of organic electroactive crystallites in a dielectric matrix on the electrical properties of a polymer dielectric
Journal Article
·
· Physical Review Materials
- Johns Hopkins Univ., Baltimore, MD (United States); Johns Hopkins University
- Harvard Univ., Cambridge, MA (United States)
- Johns Hopkins Univ., Baltimore, MD (United States)
In this work, the effects of inserting chargeable α-quaterthiophene (α4T) crystallites in polystyrene (PS) multilayers used as a transistor gate and capacitor dielectric were investigated. X-ray diffraction (XRD), scanning electron microscopy with energy dispersive x-ray spectroscopy (SEM/EDS), and confocal microscopy indicated the formation of α4T crystallites in the PS matrix. A modified saturation-regime current voltage relationship was used to estimate organic field-effect transistor (OFET) threshold voltage VTH shifting, and in turn the quantities of stored charge that were observed as a result of dielectric charging. The crystallites increased the maximum charge storage capacity as well as the charge retention capability of the dielectrics. Kelvin probe force microscopy (KPFM) showed that charges were localized near the α4T crystallites upon charging. Trilayer experiments validated the charge retention improvement of α4T crystallite-embedded PS dielectrics. The crystallites also improved breakdown characteristics in PS used as a capacitor dielectric, suggesting their application to storage capacitors in addition to OFET logic.
- Research Organization:
- Johns Hopkins University, Baltimore, MD (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- FG02-07ER46465
- OSTI ID:
- 1987653
- Alternate ID(s):
- OSTI ID: 2203185
- Journal Information:
- Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 6 Vol. 7; ISSN 2475-9953
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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