Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Chen, Bin; Wang, Xue‐Peng; Jiao, Fangying; Ning, Long; Huang, Jiaen; Xie, Jiatao; Zhang, Shengbai; Li, Xian‐Bin; Rao, Feng

doi:10.1002/advs.202301043

Title: Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Journal Article · Wed Jun 28 00:00:00 EDT 2023 · Advanced Science

DOI:https://doi.org/10.1002/advs.202301043· OSTI ID:1987579

Chen, Bin ^[1]; Wang, Xue‐Peng ^[2]; Jiao, Fangying ^[1]; Ning, Long ^[1]; Huang, Jiaen ^[1]; Xie, Jiatao ^[1]; Zhang, Shengbai ^[3]; Li, Xian‐Bin ^[4];

^[1]

College of Materials Science and Engineering Shenzhen Key Laboratory of New Information Display and Storage Materials Shenzhen University Shenzhen 518060 China
College of Materials Science and Engineering Shenzhen Key Laboratory of New Information Display and Storage Materials Shenzhen University Shenzhen 518060 China, State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
Department of Physics Applied Physics, and Astronomy Rensselaer Polytechnic Institute Troy NY 12180 USA
State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China

Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10 ⁻⁴ –10 ⁻³ . This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO ₂ interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: SC0002623

OSTI ID:: 1987579

Alternate ID(s):: OSTI ID: 1995325

Journal Information:: Advanced Science, Journal Name: Advanced Science Vol. 10 Journal Issue: 25; ISSN 2198-3844

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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