Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV

Chu, Sheng; Vanka, Srinivas; Wang, Yichen; Gim, Jiseok; Wang, Yongjie; Ra, Yong-Ho; Hovden, Robert; Guo, Hong; Shih, Ishiang; Mi, Zetian

doi:10.1021/acsenergylett.7b01138

Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV

Journal Article · Mon Jan 01 23:00:00 EST 2018 · ACS Energy Letters

DOI:https://doi.org/10.1021/acsenergylett.7b01138· OSTI ID:1984375

^[1]; Vanka, Srinivas ^[2]; Wang, Yichen ^[3]; Gim, Jiseok ^[4]; Wang, Yongjie ^[4]; Ra, Yong-Ho ^[3]; Hovden, Robert ^[4]; Guo, Hong ^[3]; Shih, Ishiang ^[3]; Mi, Zetian ^[2]

McGill University, Quebec (Canada); University of Michigan
McGill University, Quebec (Canada); University of Michigan, Ann Arbor, MI (United States)
McGill University, Quebec (Canada)
University of Michigan, Ann Arbor, MI (United States)

The performance of overall solar water splitting has been largely limited by the half-reaction of water oxidation. Here, we report a 1.7 eV bandgap InGaN nanowire photoanode for efficient solar water oxidation. It produces a low onset potential of 0.1 V versus a reversible hydrogen electrode (RHE) and a high photocurrent density of 5.2 mA/cm² at a potential as low as 0.6 V versus RHE. The photoanode yields a half-cell solar energy conversion efficiency up to 3.6%, a record for a single-photon photoanode to our knowledge. Furthermore, in the presence of hole scavengers, the photocurrent density of the InGaN photoanode reaches 21.2 mA/cm² at 1.23 V versus RHE, which approaches the theoretical limit for a 1.7 eV InGaN absorber. Furthermore, the InGaN nanowire photoanode may serve as an ideal top cell in a photoelectrochemical tandem device when stacked with a 0.9–1.2 eV bandgap bottom cell, which can potentially deliver solar-to-hydrogen efficiency over 25%.

View Accepted Manuscript (DOE)

Research Organization:: University of Michigan, Ann Arbor, MI (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: EE0008086; SC0011385

OSTI ID:: 1984375

Journal Information:: ACS Energy Letters, Journal Name: ACS Energy Letters Journal Issue: 2 Vol. 3; ISSN 2380-8195

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV

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