Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

Chen, Changming; Li, Junyu; Wang, Chunxue; Huang, Yingyan; Zhang, Daming; Shi, Zuosen; Cui, Zhanchen; Yi, Fei; Ho, Seng-Tiong

doi:10.3390/photonics8100433

Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

Journal Article · Sat Oct 09 00:00:00 EDT 2021 · Photonics

DOI:https://doi.org/10.3390/photonics8100433· OSTI ID:1983130

Chen, Changming ^[1]; Li, Junyu ^[2]; ^[3]; Huang, Yingyan ^[4]; ^[3]; Shi, Zuosen ^[3]; Cui, Zhanchen ^[3]; Yi, Fei ^[5]; Ho, Seng-Tiong ^[6]

Northwestern Univ., Evanston, IL (United States); Jilin Univ., Changchun (China)
Northwestern Univ., Evanston, IL (United States); Huazhong Univ. of Science and Technology, Wuhan (China)
Jilin Univ., Changchun (China)
OptoNet Inc., Evanston, IL (United States)
Huazhong Univ. of Science and Technology, Wuhan (China)
Northwestern Univ., Evanston, IL (United States)

In this work, a photonic device integration platform capable of integration of active-passive InP-based photonic devices without the use of material regrowth is introduced. The platform makes use of an adiabatic active-layer waveguide connection (ALWC) to move an optical beam between active and passive devices. The performance of this platform is analyzed using an example made up of four main sections: (1) a fiber coupling section for enabling vertical beam coupling from optical fiber into the photonic chip using a mode-matched surface grating with apodized duty cycles; (2) a transparent waveguide section for realizing passive photonic devices; (3) an adiabatic mode connection structure for moving the optical beam between passive and active device sections; and (4) an active device section for realizing active photonic devices. It is shown that the coupled surface grating, when added with a bottom gold reflector, can achieve a high chip-to-fiber coupling efficiency (CE) of 88.3% at 1550 nm. The adiabatic active-layer mode connection structure has an optical loss of lower than 1% (CE > 99%). The active device section can achieve an optical gain of 20 dB/mm with the use of only 3 quantum wells. The optimized structural parameters of the entire waveguide module are analyzed and discussed.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials (CNM)

Sponsoring Organization:: National Aeronautics and Space Administration (NASA); USDOE Office of Science (SC)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1983130

Journal Information:: Photonics, Journal Name: Photonics Journal Issue: 10 Vol. 8; ISSN 2304-6732

Publisher:: MDPICopyright Statement

Country of Publication:: United States

Language:: English

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42 ENGINEERING
InP-based photonic integration platform
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Study of an Integration Platform Based on an Adiabatic Active-Layer Waveguide Connection for InP Photonic Device Integration Mirroring That of Heterogeneous Integration on Silicon

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