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Revisiting excitation gaps in the fractional quantum Hall effect

Journal Article · · Physical Review. B
 [1];  [2];  [2];  [3];  [2]
  1. Pennsylvania State University, University Park, PA (United States); OSTI
  2. Pennsylvania State University, University Park, PA (United States)
  3. Institute of Mathematical Sciences, Chennai (India); Homi Bhabha National Institute, Mumbai (India)
Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples open the possibility of a better quantitative understanding of this important issue. Here we present what we believe to be accurate theoretical gaps including the effects of finite width and Landau level (LL) mixing. While theory captures the width dependence, there still remains a deviation between the calculated and the measured gaps, presumably caused by disorder. It is customary to model the experimental gaps of the n/(2n ± 1) states as Δn/(2n+1) = Ce2/[(2n ± 1)ϵl]-Γ, where ϵ is the dielectric constant of the background semiconductor and l is the magnetic length; the first term is interpreted as the cyclotron energy of composite fermions and Γ as a disorder-induced broadening of composite-fermion LLs. Fitting the gaps for various fractional quantum Hall states, we find that Γ can be nonzero even in the absence of disorder.
Research Organization:
Pennsylvania State University, University Park, PA (United States)
Sponsoring Organization:
Science and Engineering Research Board (SERB); USDOE Office of Science (SC)
Grant/Contract Number:
SC0005042
OSTI ID:
1979762
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 20 Vol. 105; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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