Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

Ho, Cheng-Han; Speck, James S.; Weisbuch, Claude; Wu, Yuh-Renn

doi:10.1103/physrevapplied.17.014033

Title: Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

Journal Article · Tue Jan 25 00:00:00 EST 2022 · Physical Review Applied

DOI:https://doi.org/10.1103/physrevapplied.17.014033· OSTI ID:1979642

Ho, Cheng-Han ^[1]; Speck, James S. ^[2]; Weisbuch, Claude ^[3];

^[4]

National Taiwan University, Taipei (Taiwan)
University of California, Santa Barbara, CA (United States)
University of California, Santa Barbara, CA (United States); Centre de Recherche en Gestion - Ecole Polytechnique / CNRS, Palaiseau (France)
National Taiwan University, Taipei (Taiwan); Industrial Technology Research Laboratories, Hsinchu (Taiwan)

For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage V_for is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in quantum wells has proven to be an important factor reducing V_for. However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-shaped defects (V-defects) have been proposed as another key factor in reducing V_for to allow lateral injection into multiple quantum wells, thus bypassing the multiple energy barriers incurred by vertical transport. In this paper, to model carrier transport in the whole LED, we consider both random-alloy and V-defect effects. A fully two-dimensional drift-diffusion charge-control solver is used to model both effects. The results indicate that the turn-on voltages for blue and green LEDs are both affected by random alloy fluctuations and the V-defect density. For green LEDs, V_for decreases more due to V-defects, where the smaller polarization barrier at the V-defect sidewall is the major path for lateral carrier injection. Then, we discuss how the V-defect density and size affects the results.

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Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); Ministry of Science and Technology, Taiwan; National Science Foundation (NSF); Simons Foundation; French Agence Nationale de la Re-cherche (ANR)

Grant/Contract Number:: EE0009691; MOST 108-2628-E-002- 010-MY3; MOST 110-2923-E-002-002; MOST 111- 2923-E-002-009; DMS-1839077; 601952; 601954; ANR-20-CE05-0037-01

OSTI ID:: 1979642

Journal Information:: Physical Review Applied, Vol. 17, Issue 1; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells

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