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Synthesis of metastable Ruddlesden–Popper titanates, (ATiO3)nAO, with n ≥ 20 by molecular-beam epitaxy

Journal Article · · APL Materials
DOI:https://doi.org/10.1063/5.0101202· OSTI ID:1979132
 [1];  [2];  [3];  [4];  [5];  [6];  [7]
  1. Cornell University, Ithaca, NY (United States); Cornell University, Ithaca, New York 14853, USA
  2. Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon (Korea, Republic of)
  3. Cornell University, Ithaca, NY (United States); Boise State University, ID (United States)
  4. Cornell University, Ithaca, NY (United States)
  5. Boise State University, ID (United States)
  6. Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon (Korea, Republic of); Hongik University, Seoul (Korea, Republic of)
  7. Cornell University, Ithaca, NY (United States); Cornell University, Ithaca, NY (United States). Kavli Institue for Nanoscale Science; Leibniz-Institut für Kristallzüchtung, Berlin (Germany)
We outline a method to synthesize ( ATiO3)n AO Ruddlesden–Popper phases with high- n, where the A-site is a mixture of barium and strontium, by molecular-beam epitaxy. The precision and consistency of the method described is demonstrated by the growth of an unprecedented (SrTiO3)50SrO epitaxial film. We proceed to investigate barium incorporation into the Ruddlesden–Popper structure, which is limited to a few percent in bulk, and we find that the amount of barium that can be incorporated depends on both the substrate temperature and the strain state of the film. At the optimal growth temperature, we demonstrate that as much as 33% barium can homogeneously populate the A-site when films are grown on SrTiO3(001) substrates, whereas up to 60% barium can be accommodated in films grown on TbScO3(110) substrates, which we attribute to the difference in strain. This detailed synthetic study of high n, metastable Ruddlesden–Popper phases is pertinent to a variety of fields from quantum materials to tunable dielectrics.
Research Organization:
Cornell University, Ithaca, NY (United States)
Sponsoring Organization:
National Science Foundation (NSF); Samsung Electronics Company; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)
Grant/Contract Number:
SC0002334
OSTI ID:
1979132
Alternate ID(s):
OSTI ID: 1887921
Journal Information:
APL Materials, Journal Name: APL Materials Journal Issue: 9 Vol. 10; ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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