Space charge limited corrections to the power figure of merit for diamond
- Arizona State University, Tempe, AZ (United States); Arizona State Univ., Tempe, AZ (United States)
- Arizona State University, Tempe, AZ (United States)
An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (RON,sp) derived from the space charge limited current–voltage relationship (Mott–Gurney square law). The limitations of the traditional Ohmic RON,sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott–Gurney based RON,sp is confirmed by Silvaco ATLAS drift–diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.
- Research Organization:
- Arizona State University, Tempe, AZ (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0021230
- OSTI ID:
- 1979058
- Alternate ID(s):
- OSTI ID: 1871049
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 120; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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