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Space charge limited corrections to the power figure of merit for diamond

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0087059· OSTI ID:1979058
An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance (RON,sp) derived from the space charge limited current–voltage relationship (Mott–Gurney square law). The limitations of the traditional Ohmic RON,sp for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott–Gurney based RON,sp is confirmed by Silvaco ATLAS drift–diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.
Research Organization:
Arizona State University, Tempe, AZ (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0021230
OSTI ID:
1979058
Alternate ID(s):
OSTI ID: 1871049
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 120; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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