Characterization of polishing-related surface damage in (0001) silicon carbide substrates
- Carnegie Mellon Univ., Pittsburgh, PA (United States). Dept. of Materials Science and Engineering
- Westinghouse Science and Technology Center, Pittsburgh, PA (United States)
Because of its wide bandgap and physical stability silicon carbide (SiC) is currently being viewed as a potentially important semiconductor material for high power and high temperature solid-state devices. The nature and extent of surface damage in 6H-SiC substrates prepared by mechanical polishing have been studied using backscattering of ultraviolet light and cross-sectional transmission electron microscopy. When the basal plane surface is prepared by lapping or polishing with large size diamond abrasives, the surface roughness is about one-fifth the particle size, while the subsurface damage extends to a depth of about half the abrasive size. Under optimum conditions of particle size, vertical load, and relative rotation speed, the extent of subsurface damage can be minimized resulting in a nominally defect-free specular surface exhibiting a uniform strained layer of less than 8 nm.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 197698
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 12 Vol. 142; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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