Band structure dependent electronic localization in macroscopic films of single-chirality single-wall carbon nanotubes

Gao, Weilu; Adinehloo, Davoud; Li, Xinwei; Mojibpour, Ali; Yomogida, Yohei; Hirano, Atsushi; Tanaka, Takeshi; Kataura, Hiromichi; Zheng, Ming; Perebeinos, Vasili; Kono, Junichiro

doi:10.1016/j.carbon.2021.07.057

Title: Band structure dependent electronic localization in macroscopic films of single-chirality single-wall carbon nanotubes

Journal Article · Thu Jul 22 00:00:00 EDT 2021 · Carbon

DOI:https://doi.org/10.1016/j.carbon.2021.07.057· OSTI ID:1976904

^[1]; Adinehloo, Davoud ^[2];

^[3]; Mojibpour, Ali ^[3]; Yomogida, Yohei ^[4];

^[5]; Tanaka, Takeshi ^[5];

^[5]; Zheng, Ming ^[6]; Perebeinos, Vasili ^[2];

^[3]

University of Utah, Salt Lake City, UT (United States)
University at Buffalo, NY (United States)
Rice University, Houston, TX (United States)
Tokyo Metropolitan University, Tokyo (Japan)
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
National Institute of Standards and Technology (NIST), Gaithersburg, MD (United States)

Significant understanding has been achieved over the last few decades regarding chirality-dependent properties of single-wall carbon nanotubes (SWCNTs), primarily through single-tube studies. However, macroscopic manifestations of chirality dependence have been limited, especially in electronic transport, despite the fact that such distinct behaviors are needed for many applications of SWCNT-based devices. In addition, developing reliable transport theory is challenging since a description of localization phenomena in an assembly of nanoobjects requires precise knowledge of disorder on multiple spatial scales, particularly if the ensemble is heterogeneous. Here, we report an observation of pronounced chirality-dependent electronic localization in temperature and magnetic field dependent conductivity measurements on macroscopic films of single-chirality SWCNTs. The samples included large-gap semiconducting (6,5) and (10,3) films, narrow-gap semiconducting (7,4) and (8,5) films, and armchair metallic (6,6) films. Experimental data and theoretical calculations revealed Mott variable-range-hopping dominated transport in all samples, while localization lengths fall into three distinct categories depending on their band gaps. Armchair films have the largest localization length. Here our detailed analyses on electronic transport properties of single-chirality SWCNT films provide significant new insight into electronic transport in ensembles of nanoobjects, offering foundations for designing and deploying macroscopic SWCNT solid-state devices.

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Research Organization:: Rice Univ., Houston, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Robert A. Welch Foundation; Core Research for Evolutional Science and Technology (CREST); University of Utah; New York University at Buffalo

Grant/Contract Number:: FG02-06ER46308; C-1509; JPMJCR17I5; DEFG02-06ER46308

OSTI ID:: 1976904

Alternate ID(s):: OSTI ID: 1811561

Journal Information:: Carbon, Vol. 183, Issue C; ISSN 0008-6223

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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