The Magneto-Transport Properties of Cr1/3TaS2 with Chiral Magnetic Solitons

Obeysekera, Dimuthu; Gamage, Kasun; Gao, Yunpeng; Cheong, Sang‐wook; Yang, Junjie

doi:10.1002/aelm.202100424

The Magneto-Transport Properties of Cr_1/3TaS₂ with Chiral Magnetic Solitons

Journal Article · Wed Aug 04 00:00:00 EDT 2021 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202100424· OSTI ID:1976235

Obeysekera, Dimuthu ^[1]; Gamage, Kasun ^[2]; Gao, Yunpeng ^[3]; Cheong, Sang‐wook ^[4]; ^[3]

New Jersey Institute of Technology, Newark, NJ (United States); OSTI
Central Michigan University, Mount Pleasant, MI (United States)
New Jersey Institute of Technology, Newark, NJ (United States)
Rutgers University, Piscataway, NJ (United States)

Cr_1/3TaS₂—a candidate of chiral magnet—has been reported as a trivial ferromagnetic material. In contrast, the Cr_1/3TaS₂ single crystals exhibit a chiral helimagnetic (CHM) transition near 140 K. The magnetic moment versus magnetic field curves reveal a CHM—chiral soliton lattice (CSL)—forced ferromagnetic (FFM) transition in the magnetic ordered state. The conducting electrons interact with the CHM and CSL orders, giving rise to the nontrivial magnetoresistance (MR) in the Cr_1/3TaS₂ single crystals. The normalized magnetic moment and normalized MR fit well with the analytical functions for chiral soliton density. The magnetic phase diagrams constructed from the magnetic moment data and MR data suggest a possible tri-critical point. Compared with the isostructural Cr_1/3NbS₂, the CHM transition temperature of Cr_1/3TaS₂ is 13 K higher, the CSL—FFM transition field is about 10 times larger, and the Dzyaloshinskii-Moriya interaction strength is 3 times bigger. The latter two likely originate from the strong spin-orbit coupling (SOC) of Cr_1/3TaS₂. This work clarifies that high-quality Cr_1/3TaS₂ single crystals are chiral magnets and Cr_1/3(Nb,Ta)S₂ could serve as an intriguing platform for the flexible engineering of chiral magnetic solitons with tunable SOC.

View Accepted Manuscript (DOE)

Research Organization:: New Jersey Institute of Technology, Newark, NJ (United States); Rutgers University, Piscataway, NJ (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: FG02-07ER46382; SC0021188

OSTI ID:: 1976235

Alternate ID(s):: OSTI ID: 1811947

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 10 Vol. 7; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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