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Title: New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films

Book ·
OSTI ID:197621
; ;  [1]; ; ;  [2]
  1. Univ. Nacional Autonoma de Mexico, Morelos (Mexico). Lab. de Energia Solar
  2. Texas A and M Univ., College Station, TX (United States)

The authors report on new p-type ternary metal chalcogenide absorber films for possible solar energy applications. The films are formed by interfacial diffusion in chemically deposited multilayer films: CuS films (0.15--0.6 {micro}m) deposited on ZnS, PbS or Bi{sub 2}S{sub 3} films ({approx} 0.1 {micro}m). The diffusion takes place during annealing at temperatures above 150 C and is shown in the XPS depth profile spectra of the annealed samples: metal atoms (Zn, Pb or Bi) of the underlying substrate films are detected at the surface layers after the annealing. The peculiarity of the multilayer films is that they show almost constant sheet resistance upon further annealing until 350 C. The sheet resistances are in the range of 20--100 {Omega} suggesting conductivities (p-type) of up to 400 {Omega}{sup {minus}1}. In the case of CuS on Bi{sub 2}S{sub 3} films, the formation of a compound, Cu{sub 3}BiS{sub 3}, is clearly detected. These have applications for solar cells.

OSTI ID:
197621
Report Number(s):
CONF-950793-; ISBN 0-8194-1890-0; TRN: IM9612%%395
Resource Relation:
Conference: 40. annual meeting of the Society of Photo-Optical Instrumentation Engineers, San Diego, CA (United States), 9-14 Jul 1995; Other Information: PBD: 1995; Related Information: Is Part Of Optical materials technology for energy efficiency and solar energy conversion XIV; Lampert, C.M. [ed.] [Lawrence Berkeley Lab., CA (United States). Energy and Environment Div.]; Deb, S.K. [ed.] [National Renewable Energy Lab., Golden, CO (United States)]; Grandqvist, C.G. [ed.] [Uppsala Univ. (Sweden). Dept. of Technology]; PB: 379 p.; Proceedings/SPIE, Volume 2531
Country of Publication:
United States
Language:
English