Rationally Engineered Vertically Aligned β ‐Ga 2− x W x O 3 Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Das, Debabrata; Sanchez, Francelia; Barton, Dallin J.; Tan, Susheng; Shutthanandan, Vaithiyalingam; Devaraj, Arun; Ramana, Chintalapalle V.

doi:10.1002/admt.202300014

Title: Rationally Engineered Vertically Aligned β ‐Ga ₂₋ _x W _x O ₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response

Journal Article · Tue May 16 00:00:00 EDT 2023 · Advanced Materials Technologies

DOI:https://doi.org/10.1002/admt.202300014· OSTI ID:1973904

Das, Debabrata ^[1]; Sanchez, Francelia ^[2]; Barton, Dallin J. ^[3]; Tan, Susheng ^[4]; Shutthanandan, Vaithiyalingam ^[3]; Devaraj, Arun ^[3];

^[1]

Center for Advanced Materials Research (CMR) University of Texas at El Paso 500 W University Ave El Paso TX 79968 USA, Department of Aerospace and Mechanical Engineering University of Texas at El Paso 500 W University Ave El Paso TX 79968 USA
Center for Advanced Materials Research (CMR) University of Texas at El Paso 500 W University Ave El Paso TX 79968 USA, Department of Metallurgical Materials, and Biomaterials Engineering University of Texas at El Paso 500 W University Ave El Paso TX 79968 USA
Environmental Molecular Sciences Laboratory (EMSL) Pacific Northwest National Laboratory (PNNL) Richland WA 99352 USA
Department of Electrical and Computer Engineering and Petersen Institute of NanoScience and Engineering University of Pittsburg Pittsburgh PA 15261 USA

Abstract With the astonishing advancement of present technology and increasing energy consumption, there is an ever‐increasing demand for energy‐efficient multifunctional sensors or transducers based on low‐cost, eco‐friendly material systems. In this context, self‐assembled vertically aligned β ‐Ga ₂₋ _x W _x O ₃ nanocomposite (GWO‐VAN) architecture‐assisted self‐biased solar‐blind UV photodetection on a silicon platform, which is the heart of traditional electronics is presented. Utilizing precisely controlled growth parameters, the formation of W‐enriched vertical β ‐Ga ₂₋ _x W _x O ₃ nanocolumns embedded into the W‐deficient β ‐Ga ₂₋ _x W _x O ₃ matrix is reached. Detailed structural and morphological analyses evidently confirm the presence of β ‐Ga ₂₋ _x W _x O ₃ nanocomposite with a high structural and chemical quality. Furthermore, absorption and photoluminescence spectroscopy explains photo‐absorption dynamics and the recombination through possible donor–acceptor energy states. The proposed GWO‐VAN framework facilitates evenly dispersed nanoregions with asymmetric donor energy state distribution and thus forms build‐in potential at the vertical β ‐Ga ₂₋ _x W _x O ₃ interfaces. As a result, the overall heterostructure evinces photovoltaic nature under the UV irradiation. A responsivity of ≈30 A/W is observed with an ultrafast response time (≈350 µs) under transient triggering conditions. Corresponding detectivity and external quantum efficiency are 7.9 × 10 ¹² Jones and 1.4 × 10 ⁴ %, respectively. It is believed that, while this is the first report exploiting GWO‐VAN architecture to manifest self‐biased solar‐blind UV photodetection, the implication of the approach is enormous in designing electronics for extreme environment functionality and has immense potential to demonstrate drastic improvement in low‐cost UV photodetector technology.

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Sponsoring Organization:: USDOE

OSTI ID:: 1973904

Journal Information:: Advanced Materials Technologies, Journal Name: Advanced Materials Technologies Vol. 8 Journal Issue: 15; ISSN 2365-709X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Rationally Engineered Vertically Aligned β ‐Ga ₂₋ _x W _x O ₃ Nanocomposites for Self‐Biased Solar‐Blind Ultraviolet Photodetectors with Ultrafast Response