Engineering local strain for single-atom nuclear acoustic resonance in silicon

O'Neill, Laura A.; Joecker, Benjamin; Baczewski, Andrew D.; Morello, Andrea

doi:10.1063/5.0069305

Engineering local strain for single-atom nuclear acoustic resonance in silicon

Journal Article · Wed Oct 27 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0069305· OSTI ID:1973479

^[1]; ^[1]; Baczewski, Andrew D. ^[2]; ^[1]

University of New South Wales, Sydney, NSW (Australia)
Sandia National Laboratory (SNL-NM), Albuquerque, NM (United States)

Mechanical strain plays a key role in the physics and operation of nanoscale semiconductor systems, including quantum dots and single-dopant devices. In this report we describe the design of a nanoelectronic device, where a single nuclear spin is coherently controlled via nuclear acoustic resonance (NAR) through the local application of dynamical strain. The strain drives spin transitions by modulating the nuclear quadrupole interaction. We adopt an AlN piezoelectric actuator compatible with standard silicon metal–oxide–semiconductor processing and optimize the device layout to maximize the NAR drive. We predict NAR Rabi frequencies of order 200 Hz for a single 123Sb nucleus in a wide region of the device. Spin transitions driven directly by electric fields are suppressed in the center of the device, allowing the observation of pure NAR. Using electric field gradient-elastic tensors calculated by the density-functional theory, we extend our predictions to other high-spin group-V donors in silicon and to the isoelectronic 73Ge atom.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Army Research Office (ARO); Australian Department of Industry, Innovation, and Science; Australian Research Council; USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231; NA0003525

OSTI ID:: 1973479

Alternate ID(s):: OSTI ID: 1827747

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 119; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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