Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Rasel, Md Abu Jafar; Schoell, Ryan; Al-Mamun, Nahid Sultan; Hattar, Khalid; Harris, C. Thomas; Haque, Aman; Wolfe, Douglas E.; Ren, Fan; Pearton, Stephen J.

doi:10.1088/1361-6463/accfa7

Title: Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Journal Article · Tue May 09 00:00:00 EDT 2023 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/accfa7· OSTI ID:1973035

Rasel, Md Abu Jafar; Schoell, Ryan; Al-Mamun, Nahid Sultan; Hattar, Khalid;

;

; Wolfe, Douglas E.; Ren, Fan;

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au ⁴⁺ ion to fluence levels ranging from $1.72 \times 10^{10}$ to $3.745 \times 10^{13}$ ions cm ⁻² , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au ⁴⁺ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF); Defense Threat Reduction Agency (DTRA); National Science Foundation (NSF)

Grant/Contract Number:: NA-0003525; NA0003525; HDTRA1-20-2-0002; ECCS 201579; DMR 1856662

OSTI ID:: 1973035

Alternate ID(s):: OSTI ID: 1971254; OSTI ID: 2311594

Report Number(s):: SAND-2023-03374J

Journal Information:: Journal of Physics. D, Applied Physics, Journal Name: Journal of Physics. D, Applied Physics Vol. 56 Journal Issue: 30; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
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Title: Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

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